Report overview
Epitaxial growth is used today for siliconbased devices as well as in the III-V compound semiconductor industry. This demand is expected to increase and strongly driven by microLEDs, power devices and laser diode applications.
In terms of semiconductor substrate, GaN material represents the major epitaxy market after silicon substrates, mostly driven by the traditional LED GaN-devices.
On the other hand, wide band gap materials like SiC substrates have found opportunities in the power electronics market. Despite the high market price of SiC, such substrates are a strong asset for high-voltage applications, and thus are considered as a technology choice for some MOSFET and diode products.
The Global Epitaxial Growth Equipment for SiC and GaN market comprises a wide range of products suitable for use within the Global domestic market. In order to quantify and analyse the market, our definition of the market includes the following key product sectors:
This report specifically excludes labour and measures the product values at manufacturers selling prices. value-added tax, import duties and transportation fees are excluded as well as labour other delivery charges. Whilst we have made every effort to exclude commercial applications, there may be some light commercial applications included within the overall market sizes quoted.
Where volume figures are illustrated for the overall market, these are provided as number of sales. The geographical coverage for this report is the Global and includes domestically manufactured and imported products.
This report aims to provide a comprehensive presentation of the global market for Epitaxial Growth Equipment for SiC and GaN, with both quantitative and qualitative analysis, to help readers develop business/growth strategies, assess the market competitive situation, analyze their position in the current marketplace, and make informed business decisions regarding Epitaxial Growth Equipment for SiC and GaN. This report contains market size and forecasts of Epitaxial Growth Equipment for SiC and GaN in global, including the following market information:
Global Epitaxial Growth Equipment for SiC and GaN Market Revenue, 2018-2023, 2024-2029, ($ millions)
Global Epitaxial Growth Equipment for SiC and GaN Market Sales, 2018-2023, 2024-2029, (Units)
Global top five Epitaxial Growth Equipment for SiC and GaN companies in 2022 (%)
The global Epitaxial Growth Equipment for SiC and GaN market was valued at US$ 893.5 million in 2022 and is projected to reach US$ 1279.5 million by 2029, at a CAGR of 5.3% during the forecast period. The influence of COVID-19 and the Russia-Ukraine War were considered while estimating market sizes.
Global key players of epitaxial growth equipment for SiC and GaN include Aixtron, ASM International, Applied Material, etc. Asia is the largest producer of epitaxial growth equipment for SiC and GaN, holds a share about 70%, followed by North America, and Europe. In terms of product, CVD is the largest segment, with a share over 50%. And in terms of application, the largest segment is SiC epitaxy, with a share over 50%.
We surveyed the Epitaxial Growth Equipment for SiC and GaN manufacturers, suppliers, distributors and industry experts on this industry, involving the sales, revenue, demand, price change, product type, recent development and plan, industry trends, drivers, challenges, obstacles, and potential risks.
Total Market by Segment:
Global Epitaxial Growth Equipment for SiC and GaN Market, by Type, 2018-2023, 2024-2029 ($ Millions) & (Units)
Global Epitaxial Growth Equipment for SiC and GaN Market Segment Percentages, by Type, 2022 (%)
CVD
MOCVD
Others
Global Epitaxial Growth Equipment for SiC and GaN Market, by Application, 2018-2023, 2024-2029 ($ Millions) & (Units)
Global Epitaxial Growth Equipment for SiC and GaN Market Segment Percentages, by Application, 2022 (%)
SiC Epitaxy
GaN Epitaxy
Global Epitaxial Growth Equipment for SiC and GaN Market, By Region and Country, 2018-2023, 2024-2029 ($ Millions) & (Units)
Global Epitaxial Growth Equipment for SiC and GaN Market Segment Percentages, By Region and Country, 2022 (%)
North America
US
Canada
Mexico
Europe
Germany
France
U.K.
Italy
Russia
Nordic Countries
Benelux
Rest of Europe
Asia
China
Japan
South Korea
Southeast Asia
India
Rest of Asia
South America
Brazil
Argentina
Rest of South America
Middle East & Africa
Turkey
Israel
Saudi Arabia
UAE
Rest of Middle East & Africa
Competitor Analysis
The report also provides analysis of leading market participants including:
Key companies Epitaxial Growth Equipment for SiC and GaN revenues in global market, 2018-2023 (Estimated), ($ millions)
Key companies Epitaxial Growth Equipment for SiC and GaN revenues share in global market, 2022 (%)
Key companies Epitaxial Growth Equipment for SiC and GaN sales in global market, 2018-2023 (Estimated), (Units)
Key companies Epitaxial Growth Equipment for SiC and GaN sales share in global market, 2022 (%)
Further, the report presents profiles of competitors in the market, key players include:
NuFlare Technology Inc.
Tokyo Electron Limited
NAURA
VEECO
Taiyo Nippon Sanso
Aixtron
Advanced Micro-Fabrication Equipment Inc. China (AMEC?
Applied Material
ASM International
Outline of Major Chapters:
Chapter 1: Introduces the definition of Epitaxial Growth Equipment for SiC and GaN, market overview.
Chapter 2: Global Epitaxial Growth Equipment for SiC and GaN market size in revenue and volume.
Chapter 3: Detailed analysis of Epitaxial Growth Equipment for SiC and GaN manufacturers competitive landscape, price, sales and revenue market share, latest development plan, merger, and acquisition information, etc.
Chapter 4: Provides the analysis of various market segments by type, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different market segments.
Chapter 5: Provides the analysis of various market segments by application, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different downstream markets.
Chapter 6: Sales of Epitaxial Growth Equipment for SiC and GaN in regional level and country level. It provides a quantitative analysis of the market size and development potential of each region and its main countries and introduces the market development, future development prospects, market space of each country in the world.
Chapter 7: Provides profiles of key players, introducing the basic situation of the main companies in the market in detail, including product sales, revenue, price, gross margin, product introduction, recent development, etc.
Chapter 8: Global Epitaxial Growth Equipment for SiC and GaN capacity by region & country.
Chapter 9: Introduces the market dynamics, latest developments of the market, the driving factors and restrictive factors of the market, the challenges and risks faced by manufacturers in the industry, and the analysis of relevant policies in the industry.
Chapter 10: Analysis of industrial chain, including the upstream and downstream of the industry.
Chapter 11: The main points and conclusions of the report.
