TOP CATEGORY: Chemicals & Materials | Life Sciences | Banking & Finance | ICT Media
Download Report PDF Instantly
Report overview
The global Ferro-electric Random Access Memory market was valued at US$ 280.9 million in 2022 and is projected to reach US$ 360.7 million by 2029, at a CAGR of 3.6% during the forecast period. The influence of COVID-19 and the Russia-Ukraine War were considered while estimating market sizes.
Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but utilizing a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies which can offer that same functionality as flash memory.
FeRAM consists of a grid of small capacitors and associated wiring and signling transistors. Each storage element, a cell, consists of one capacitor and one transistor. Unlike the DRAM use a linear dielectric in its cell capacitor, dielectric structure in the FeRAM cell capacitor usually contains ferroelectric material, typically lead zirconate titanate (PZT).
A ferroelectric material has a nonlinear relationship between the applied electric field and the apparent stored charge. The ferroelectric characteristic has the form of a hysteresis loop, which is very similar in shape to the hysteresis loop of ferromagnetic materials. The dielectric constant of a ferroelectric is typically much higher than that of a linear dielectric because of the effects of semi-permanent electric dipoles formed in the crystal structure of the ferroelectric material. When an external electric field is applied across a dielectric, the dipoles tend to align themselves with the field direction, produced by small shifts in the positions of atoms and shifts in the distributions of electronic charge in the crystal structure. After the charge is removed, the dipoles retain their polarization state. Binary "0"s and "1"s are stored as one of two possible electric polarizations in each data storage cell. For example, in the figure a "1" is encoded using the negative remnant polarization "-Pr", and a "0" is encoded using the positive remnant polarization "+Pr".In terms of operation, FeRAM is similar to DRAM. Writing is accomplished by applying a field across the ferroelectric layer by charging the plates on either side of it, forcing the atoms inside into the "up" or "down" orientation (depending on the polarity of the charge), thereby storing a "1" or "0". Reading, however, is somewhat different than in DRAM. The transistor forces the cell into a particular state, say "0". If the cell already held a "0", nothing will happen in the output lines. If the cell held a "1", the re-orientation of the atoms in the film will cause a brief pulse of current in the output as they push electrons out of the metal on the "down" side. The presence of this pulse means the cell held a "1". Since this process overwrites the cell, reading FeRAM is a destructive process, and requires the cell to be re-written if it was changed.
This report aims to provide a comprehensive presentation of the global market for Ferro-electric Random Access Memory, with both quantitative and qualitative analysis, to help readers develop business/growth strategies, assess the market competitive situation, analyze their position in the current marketplace, and make informed business decisions regarding Ferro-electric Random Access Memory. This report contains market size and forecasts of Ferro-electric Random Access Memory in global, including the following market information:
The major players in global Ferroelectric RAM market include Ramtron, Fujistu, etc. The top 2 players occupy about 85% shares of the global market. North America and China are main markets, they occupy about 60% of the global market. Serial Memory is the main type, with a share about 60%. Smart Meters and Medical Devices are main applications, which hold a share about 50%.
We has surveyed the Ferro-electric Random Access Memory manufacturers, suppliers, distributors and industry experts on this industry, involving the sales, revenue, demand, price change, product type, recent development and plan, industry trends, drivers, challenges, obstacles, and potential risks.
Total Market by Segment:
Global Ferro-electric Random Access Memory Market, by Type, 2018-2023, 2024-2032 ($ Millions) & (K Units)
Global Ferro-electric Random Access Memory Market Segment Percentages, by Type, 2022 (%)
Global Ferro-electric Random Access Memory Market, by Application, 2018-2023, 2024-2032 ($ Millions) & (K Units)
Global Ferro-electric Random Access Memory Market Segment Percentages, by Application, 2022 (%)
Global Ferro-electric Random Access Memory Market, By Region and Country, 2018-2023, 2024-2032 ($ Millions) & (K Units)
Global Ferro-electric Random Access Memory Market Segment Percentages, By Region and Country, 2022 (%)
Competitor Analysis
The report also provides analysis of leading market participants including:
Key companies Ferro-electric Random Access Memory revenues in global market, 2018-2023 (Estimated), ($ millions)
Key companies Ferro-electric Random Access Memory revenues share in global market, 2022 (%)
Key companies Ferro-electric Random Access Memory sales in global market, 2018-2023 (Estimated), (K Units)
Key companies Ferro-electric Random Access Memory sales share in global market, 2022 (%)
Further, the report presents profiles of competitors in the market, key players include:
Outline of Major Chapters:
