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The global Silicon Carbide-Based Power Device market was valued at USD 2.77 billion in 2023 and is projected to reach USD 7.25 billion by 2030, growing at a Compound Annual Growth Rate (CAGR) of 15.2% during the forecast period (2024-2030). The influence of COVID-19 and the Russia-Ukraine War were considered while estimating market sizes.

The U.S. Market is Estimated at $ Million in 2023, While China is Forecast to Reach $ Million.
Power Discrete Devices Segment to Reach $ Million by 2030, with a % CAGR in next six years.
The global key manufacturers of Silicon Carbide-Based Power Device include Infineon Technologies, Fuji Electric, Mitsubishi Electric, ON Semiconductor, Toshiba Corporation, STMicroelectronics, ROHM SEMICONDUCTOR, China Resources Microelectronics Limited and Wuxi NCE Power, etc. in 2023, the global top five players have a share approximately % in terms of revenue.
Silicon carbide-based power devices, also known as power electronic devices, are mainly used in high-power electronic devices for power conversion and control circuits of power equipment, including power diodes, power transistors, thyristors, MOSFETs, IGBTs, etc.
This report aims to provide a comprehensive presentation of the global market for Silicon Carbide-Based Power Device, with both quantitative and qualitative analysis, to help readers develop business/growth strategies, assess the market competitive situation, analyze their position in the current marketplace, and make informed business decisions regarding Silicon Carbide-Based Power Device. This report contains market size and forecasts of Silicon Carbide-Based Power Device in global, including the following market information:

• Global Silicon Carbide-Based Power Device Market Revenue, 2019-2024, 2025-2030, ($ millions)
• Global Silicon Carbide-Based Power Device Market Sales, 2019-2024, 2025-2030, (K Units)
• Global top five Silicon Carbide-Based Power Device companies in 2023 (%)

MARKET MONITOR GLOBAL, INC (MMG) has surveyed the Silicon Carbide-Based Power Device manufacturers, suppliers, distributors and industry experts on this industry, involving the sales, revenue, demand, price change, product type, recent development and plan, industry trends, drivers, challenges, obstacles, and potential risks.
Total Market by Segment:
Global Silicon Carbide-Based Power Device Market, by Type, 2019-2024, 2025-2030 ($ Millions) & (K Units)
Global Silicon Carbide-Based Power Device Market Segment Percentages, by Type, 2023 (%)

• Power Discrete Devices
• Power Modules
• Power ICs

• Automotive
• Energy
• Industrial
• Transport
• Other

• North America (United States, Canada, Mexico)
• Europe (Germany, France, United Kingdom, Italy, Spain, Rest of Europe)
• Asia-Pacific (China, India, Japan, South Korea, Australia, Rest of APAC)
• The Middle East and Africa (Middle East, Africa)
• South and Central America (Brazil, Argentina, Rest of SCA)

• Key companies Silicon Carbide-Based Power Device revenues in global market, 2019-2024 (Estimated), ($ millions)
• Key companies Silicon Carbide-Based Power Device revenues share in global market, 2023 (%)
• Key companies Silicon Carbide-Based Power Device sales in global market, 2019-2024 (Estimated), (K Units)
• Key companies Silicon Carbide-Based Power Device sales share in global market, 2023 (%)

• Infineon Technologies
• Fuji Electric
• Mitsubishi Electric
• ON Semiconductor
• Toshiba Corporation
• STMicroelectronics
• ROHM SEMICONDUCTOR
• China Resources Microelectronics Limited
• Wuxi NCE Power
• StarPower Semiconductor
• Hangzhou Silan Microelectronics
• Zibo Green Innocore Electronic Technology

Outline of Major Chapters:
Chapter 1: Introduces the definition of Silicon Carbide-Based Power Device, market overview.
Chapter 2: Global Silicon Carbide-Based Power Device market size in revenue and volume.
Chapter 3: Detailed analysis of Silicon Carbide-Based Power Device manufacturers competitive landscape, price, sales and revenue market share, latest development plan, merger, and acquisition information, etc.
Chapter 4: Provides the analysis of various market segments by type, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different market segments.
Chapter 5: Provides the analysis of various market segments by application, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different downstream markets.
Chapter 6: Sales of Silicon Carbide-Based Power Device in regional level and country level. It provides a quantitative analysis of the market size and development potential of each region and its main countries and introduces the market development, future development prospects, market space of each country in the world.
Chapter 7: Provides profiles of key players, introducing the basic situation of the main companies in the market in detail, including product sales, revenue, price, gross margin, product introduction, recent development, etc.
Chapter 8: Global Silicon Carbide-Based Power Device capacity by region & country.
Chapter 9: Introduces the market dynamics, latest developments of the market, the driving factors and restrictive factors of the market, the challenges and risks faced by manufacturers in the industry, and the analysis of relevant policies in the industry.
Chapter 10: Analysis of industrial chain, including the upstream and downstream of the industry.
Chapter 11: The main points and conclusions of the report.